NESG270034中文资料

NPN SILICON GERMANIUM RF TRANSISTOR

NESG270034

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (2 W)

3-PIN POWER MINIMOLD (34 PKG)

FEATURES

This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz

Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V 3-pin power minimold (34 PKG)

ORDERING INFORMATION

Part Number NESG270034

Order Number NESG270034-AZ

Package

3-pin power minimold (34 PKG) (Pb-Free)

2

Note1,

Quantity 25 pcs (Non reel) 1 kpcs/reel

Supplying Form

Magazine case

NESG270034-T1 NESG270034-T1-AZ 12 mm wide embossed taping

Pin 2 (Emitter) face the perforation side of the tape

Notes 1. Contains Lead in the part except the electrode terminals.

2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature

V

CBOVCEOVEBOICPtot

Note

Tj°C Tstg

65 to +150

°C

2

Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB

CautionObserve precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10577EJ01V0DS (1st edition) Date Published September 2005 CP(K)

© NEC Compound Semiconductor Devices, Ltd. 2005

THERMAL RESISTANCE (TA = +25°C)

Termal Resistance from Junction to Ambient

Note

Rthj-a°C/W

Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB

2

RECOMMENDED OPERATING RANGE (TA = +25°C)

Collector to Emitter Voltage Collector Current Input Power

Note

VCE IC Pin

Note Input power under conditions of VCE ≤ 6.0 V, f = 460 MHz

2

Preliminary Data Sheet PU10577EJ01V0DS

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Test DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain

RF Characteristics Linner Gain (1) Linner Gain (2)

ICBO IEBO hFE

Note

80

120

1 1 180

VCB = 9.2 V, IE = 0 mA VEB = 1.0 V, IC = 0 mA VCE = 3 V, IC = 100 mA

µA µA

GL

VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 0 dBm

GL Pout Pout

VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm

VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 20 dBm

VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm

VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 20 dBm

VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 25 dBm

dB

15 dB dBm dBm % %

Output Power (1) Output Power (2) Collector Efficiency (1) Collector Efficiency (2)

31.5 60 50

ηC ηC

Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

hFE CLASSIFICATION

hFE Value

80 to 180

Preliminary Data Sheet PU10577EJ01V0DS

3

NESG270034

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

TOTAL POWER DISSIPATIONvs. AMBIENT TEMPERATURE

Total Power Dissipation Ptot (mW)

Ambient Temperature TA ( C)

Remark The graph indicates nominal characteristics.

4

Preliminary Data Sheet PU10577EJ01V0DS

NESG270034

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input.Click here to download S-parameters. [RF and Microwave] → [Device Parameters]URL http://doc.guandang.net/

PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS

OUTPUT POWER, COLLECTOR

CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER

)

)

m,)A%B(m dC(( ηtu oCI yP ct nn reeeirrcwiufoCfPE rrtuoottpcctueellllOooCCInput Power Pin (dBm)

Remark The graph indicates nominal characteristics.

Preliminary Data Sheet PU10577EJ01V0DS

5

NESG270034

EVALUATION CIRCUIT (f = 460 MHz)

RF IN

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

EVALUATION BOARD (f = 460 MHz)

GNDVBE

VCE

GND

Notes

1. 38 × 38 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 6

Preliminary Data Sheet PU10577EJ01V0DS

COMPONENT LIST

Size Purpose

C1 Murata 11 pF 1005 Input DC Block/Input RF Matching C2 Murata 9.5 pF 1005 Input RF Matching

C3 Murata 39 pF 1005 Input DC Block/Output RF Matching C4 Murata 10 000 pF 1005 RF GND C5 Murata 10 000 pF 1005 RF GND

L1 Toko 390 nH 2012 RF Block/Input RF Matching L2 Toko 47 nH 1608 RF Block/Output RF Matching L3 Toko 5.6 nH 2012 Input RF Matching L4

Toko

5.1 nH

1608

Output RF Matching

Improve Stability Improve Stability

Preliminary Data Sheet PU10577EJ01V0DS

7

PACKAGE DIMENSIONS

3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)

8

PIN CONNECTIONS

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