ACT-E4M32A-100F1I中文资料

元器件交易网http://doc.guandang.net

Sector Erase

Advanced

Features

http://doc.guandang.net/act1.htm

sCIRCUIT TECHNOLOGY

s 8 Low Voltage/Power AMD 2M x 8 FLASH Die in One

MCM Package

s Overall Configuration is 4M x 32

s +5V Power Supply / +5V Programing Operations Access Times of 100, 120 and 150 ns

s Erase/Program Cycles – 100,000 Minimum (+25°C)s Sector erase architecture (Each Die)

q 32 uniform sectors of 64 Kbytes each

q Any combination of sectors can be erased. Also

detection of program or erase cycle completion

sto the read mode

s Erase Suspend/Resume – Supports reading or programming data to a sector not being eraseds Packaging – Hermetic Ceramic

q 68–Lead, Low Profile CQFP(F1), 1.56"SQ x .140"maxq 68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x .20"max

supports full chip erase

q Sector group protection is user definables Embedded Erase Algorithims – Automatically

(.18 max thickness available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)s Internal Decoupling Capacitors for Low Noise

pre-programs and erases the die or any sectors Embedded Program Algorithims – Automatically programs and verifies data at specified address

Operation

s Commercial, Industrial and Military Temperature Ranges

s MIL-PRF-38534 Compliant MCMs Available

General Description

Utilizing AMD’s Sector Erase Flash Memory Die, the ACT-F4M32A is a high speed, 128megabit CMOS flash multichip module (MCM) designed for full temperature range, military,space, or high reliability applications.

The ACT-F4M32A consists of eight high-performance AMD Am29F016 16Mbit(16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groupsof 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each).

ILIH)(OE) being logically active. Access time grades of 100ns, 120ns and 150ns maximum arestandard.

The ACT-F4M32A is offered in two different hermetically sealed co-fired 68 leadceramic packages. This allows operation in a military environment temperature range of-55°C to +125°C.

The ACT-F4M32A can be programmed (both read and write functions) in-system usingthe +5.0V VCC power supply. A 12.0V VPP is not required for programming or eraseDQ7, or by the Toggle bit (DQ6).

The ACTexecution of any Embedded Program Alggorithm or Embedded Erase Algorithm will beterminated.

Each block can be independently erased and programmed 100,000 times at +25°C.

For Detail Information regarding the operation of the Am29F016 Sector Erase FlashMemory, see the AMD datasheet (Publication 18805).

68 Pins — CQFP

Pin #1234567891011121314151617

FunctionGND1A5A4A3A2A1A0I/O0I/O1I/O2I/O3I/O4I/O5I/O6I/O7

Pin #1819202122232425262728293031323334

FunctionGNDI/O8I/O9I/O10I/O11I/O12I/O13I/O14I/O15VCCA11A12A13A14A15A162

Pin #3536373839404142434445464748495051

Function4A17A18 A19A20A21NCI/O31I/O30I/O29I/O28I/O27I/O26I/O25I/O24

Pin #5253545556575859606162636465666768

FunctionGNDI/O23I/O22I/O21I/O20I/O19I/O18I/O17I/O16VCCA10A9A8A7A6WE3

Consult Factory for Special order: Pin 9 -NC

Package Outline — CQFP "F1"

(16 at .050 4 sides)

68 Pins — Dual-Cavity CQFP (Standard Configuration)

Pin #1234567891011121314151617

FunctionGNDNCA5A4A3A2A1A0I/O0I/O1I/O2I/O3I/O4I/O5I/O6I/O7

Pin #1819202122232425262728293031323334

FunctionGNDI/O8I/O9I/O10I/O11I/O12I/O13I/O14I/O15VCCA11A12A13A14A15A161

Pin #3536373839404142434445464748495051

Function2A17NCNCA18A19A20I/O31I/O30I/O29I/O28I/O27I/O26I/O25I/O24

Pin #5253545556575859606162636465666768

FunctionGNDI/O23I/O22I/O21I/O20I/O19I/O18I/O17I/O16VCCA10A9A8A7A6WENC

Consult Factory for Special order: Pin 38 -NC

Package Outline — Dual-Cavity CQFP "F2"

Top View

.015

.050TYP

*.180 MAX available, call factory for details

Detail “A”

All dimensions in inches

II THNY

Ordering Information

Model Number

ACT–F4M32C–100F1CACT–F4M32A–100F2CACT–F4M32C–100F2CACT–F4M32A–100F1CACT–F4M32C–100F1IACT–F4M32A–100F2IACT–F4M32C–100F2IACT–F4M32A–100F1IACT–F4M32C–100F1MACT–F4M32A–100F2MACT–F4M32C–100F2MACT–F4M32A–100F1M

Screening

Commercial (0°C to +70°C)Commercial (0°C to +70°C)Commercial (0°C to +70°C)Commercial (0°C to +70°C)Industrial (-40°C to +85°C)Industrial (-40°C to +85°C)Industrial (-40°C to +85°C)Industrial (-40°C to +85°C)Military (-55°C to +125°C)Military (-55°C to +125°C)Military (-55°C to +125°C)Military (-55°C to +125°C)

Speed100 ns100 ns100 ns100 ns100 ns100 ns100 ns100 ns100 ns100 ns100 ns100 ns

Package

1.56"sq CQFP.88"sq CQFP.88"sq CQFP1.56"sq CQFP1.56"sq CQFP.88"sq CQFP.88"sq CQFP1.56"sq CQFP1.56"sq CQFP.88"sq CQFP.88"sq CQFP1.56"sq CQFP

Part Number Breakdown

ACT–F4M32A–100F1M

Aeroflex CircuitTechnologyMemory Type

S = SRAM

F = FLASH EEPROME = EEPROM

D = Dynamic RAMMemory Depth, LocationsMemory Width, Bits

Pinout Options

Memory Speed, ns (+5V VCC)

Screening

C = Commercial Temp, 0°C to +70°C I = Industrial Temp, -40°C to +85°CT = Military Temp, -55°C to +125°C

M = Military Temp, -55°C to +125°C, Screened *Q = MIL-PRF-38534 Compliant/SMD if applicable

Package Type & Size

Surface Mount Packages

F1 = 1.56"SQ 68 Pin CQFP

F2 = .88"SQ 68 Pin Dual-Cavity CQFP

* Screened to the inpidual test methods of MIL-STD-883

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