AM29LV200BB-120DRI中文资料

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Am29LV200B Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1DISTINCTIVE CHARACTERISTICS

■Single power supply operation

—2.7 to 3.6 volt read and write operations for battery-powered applications■Manufactured on 0.32 µm process technology■High performance

—60R, 70, 90, 120 ns access time

■Low power consumption (typical values at 5MHz)—200 nA Automatic Sleep mode current—200 nA standby mode current—7 mA read current

—15 mA program/erase current■Flexible sector architecture

—One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)—One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)—Supports full chip erase—Sector Protection features:

A hardware method of locking a sector to prevent any program or erase operations within that sector

Sectors can be locked in-system or via programming equipment

Temporary Sector Unprotect feature allows code changes in previously locked sectors■Unlock Bypass Program Command

—Reduces overall programming time when issuing multiple program command sequences■Top or Bottom boot block configuration

■Embedded Algorithms

—Embedded Erase algorithm automatically

preprograms and erases the entire chip or any combination of designated sectors—Embedded Program algorithm automatically writes and verifies data at specified addresses■Minimum 1,000,000 write cycle guarantee persector■Compatibility with JEDEC standards—Pinout and software compatible with single-power supply Flash—Superior inadvertent write protection■Data# Polling and toggle bits

—Provides a software method of detecting program or erase operation completion■Ready/Busy# pin (RY/BY#)

—Provides a hardware method of detecting program or erase cycle completion■Erase Suspend/Erase Resume

—Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation■Hardware reset pin (RESET#)

—Hardware method to reset the device to reading array data■20-year data retention at 125°C■Tested to datasheet specifications at temperature■Quality and reliability levels equivalent to standard packaged components■500 µm or 280 µm die thickness shipping options

Publication# 26014Rev: A Amendment/+2Issue Date: November 18, 2003

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GENERAL DESCRIPTION

The Am29LV200B in Known Good Die (KGD) form is a2 Mbit, 3.0 volt-only Flash memory. AMD defines KGDas standard product in die form, tested for functionalityand speed. AMD KGD products have the same reliabilityand quality as AMD products in packaged form.

The host system can detect whether a program orerase operation is complete by observing the RY/BY#pin, or by reading the DQ7 (Data# Polling) and DQ6(toggle) status bits. After a program or erase cyclehas been completed, the device is ready to read arraydata or accept another command.

The sector erase architecture allows memory sectorsto be erased and reprogrammed without affecting thedata contents of other sectors. The device is fullyerased when shipped from the factory.

Hardware data protection measures include a lowVCC detector that automatically inhibits write opera-tions during power transitions. The hardware sectorprotection feature disables both program and eraseoperations in any combination of the sectors ofmemory. This can be achieved in-system or via pro-gramming equipment.

The Erase Suspend feature enables the user to puterase on hold for any period of time to read data from,or program data to, any sector that is not selected forerasure. True background erase can thus be achieved.The hardware RESET# pin terminates any operationin progress and resets the internal state machine toreading array data. The RESET# pin may be tied to thesystem reset circuitry. A system reset would thus alsoreset the device, enabling the system microprocessorto read the boot-up firmware from the Flash memory.The device offers two power-saving features. Whenaddresses have been stable for a specified amount oftime, the device enters the automatic sleep mode.The system can also place the device into the standbymode. Power consumption is greatly reduced in boththese modes.

AMD’s Flash technology combines years of Flashmemory manufacturing experience to produce thehighest levels of quality, reliability and cost effective-ness. The device electrically erases all bits withina sector simultaneously via Fowler-Nordheim tun-neling. The data is programmed using hot electron injec-tion.

Am29LV200B Features

The Am29LV200B is an 2 Mbit, 3 volt-only Flashmemory organized as 262,144 bytes or 131,072 words.The word-wide data (x16) appears on DQ15–DQ0; thebyte-wide (x8) data appears on DQ7–DQ0. To elimi-nate bus contention the device has separate chipenable (CE#), write enable (WE#) and output enable(OE#) controls.

The device requires only a single 3 volt power supplyfor both read and write functions. Internally generatedand regulated voltages are provided for the programand erase operations. No VPP is required for programor erase operations. The device can also be pro-grammed in standard EPROM programmers.

The device is entirely command set compatible with theJEDEC single-power-supply Flash standard. Com-mands are written to the command register using stan-dard microprocessor write timings. Register contentsserve as input to an internal state-machine that con-trols the erase and programming circuitry. Write cyclesalso internally latch addresses and data needed for theprogramming and erase operations. Reading data outof the device is similar to reading from other Flash orEPROM devices.

Device programming occurs by executing the pr …… 此处隐藏：19135字，全部文档内容请下载后查看。喜欢就下载吧 ……