DMP2066LDM-7;中文规格书,Datasheet资料

Features

Low RDS(ON):

40 mΩ @VGS = -4.5V 70 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

Case: SOT26 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate)

SOT26

Top View

Top View

Internal Schematic

Ordering Information (Note 3)

Part Number DMP2066LDM-7 DMP2066LDMQ-7

Notes:

Case SOT26 SOT26 Packaging 3000/Tape & Reel 3000/Tape & Reel

1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at . 3. For packaging details, go to our website at .

Marking Information

DMC = Product Type Marking Code YM = Date Code Marking DMC Y = Year (ex: V = 2008) M = Month (ex: 9 = September)

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code

Month Jan Feb Mar Apr May

Jun

Jul Aug Sep Oct Nov Dec Code

YM

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

1 of 5

December 2011

© Diodes Incorporated

Maximum Ratings @TA = 25°C unless otherwise specified

Drain-Source Voltage VDSS

V Gate-Source Voltage ±12 VGSS

Drain Current (Note 4) Continuous TA = 25°C -4.6

A ID

-3.7 TA = 70°C

Pulsed Drain Current (Note 5) IDM

Body-Diode Continuous Current (Note 4) IS

Thermal Characteristics

Total Power Dissipation (Note 4) PD

Thermal Resistance, Junction to Ambient (Note 4); Steady-State 100 °C/W RJA Operating and Storage Temperature Range -55 to +150 °C TJ, TSTG

Electrical Characteristics @TA = 25°C unless otherwise specified

STATIC PARAMETERS

Drain-Source Breakdown Voltage -20 V BVDSS ID = -250μA, VGS = 0V

-1 μA Zero Gate Voltage Drain Current TJ = 25°C IDSS VDS = -20V, VGS = 0V

nA Gate-Body Leakage Current ±100 VDS = 0V, VGS = ±12V IGSS

Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA On State Drain Current (Note 6) -15 A ID (ON) VGS = -4.5V, VDS = -5V

VGS = -4.5V, ID = -4.6A 29 40

Static Drain-Source On-Resistance (Note 6) mΩ RDS (ON)

55 70 VGS = -2.5V, ID = -3.8A 9 S Forward Transconductance (Note 6) VDS = -10V, ID = -4.6A gFS

Diode Forward Voltage (Note 6) IS = -2.1A, VGS = 0V VSD

Maximum Body-Diode Continuous Current (Note 4) IS

DYNAMIC PARAMETERS (Note 7)

820 pF Input Capacitance Ciss

VDS = -15V, VGS = 0V

200 pF Output Capacitance Coss

f = 1.0MHz

160 pF Reverse Transfer Capacitance Crss

VDS = 0V, VGS = 0V

Gate Resistance 2.5 RG Ω

f = 1.0MHz

SWITCHING CHARACTERISTICS

10.1 Total Gate Charge QG

VDS = -10V, VGS = -4.5V,

1.5 nC Gate-Source Charge QGS

ID = -4.5A

4.3 Gate-Drain Charge QGD

4.4 Turn-On Delay Time td(on)

9.9 Rise Time tr VDS = -10V, VGS = -4.5V,

ns

28.0 ID = -1A, RG = 6.0Ω Turn-Off Delay Time td(off)

23.4 Fall Time tf

Notes:

4. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 5. Repetitive Rating, pulse width limited by junction temperature. 6. Test pulse width t = 300μs.

7. Guaranteed by design. Not subject to production testing.

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

2 of 5

December 2011

© Diodes Incorporated

30

20

24ID, DRAIN CURRENT (A)

16ID ,DRAIN CURRENT (A)

18

12

12

8

6

4

0VDS, DRAIN-SOURCE VOLTAGE (V)Fig. 1 Typical Output Characteristic

0VGS, GATE-SOURCE VOLTAGE (V)Fig. 2 Typical Transfer Characteristic

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN-SOURCE CURRENT (A)Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage

-ID, DRAIN CURRENT (A)Fig. 4 Typical On-Resistance vs. Drain Current and Temperature

VGS(TH), GATE THRESHOLD VOLTAGE (V)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)

TA, AMBIENT TEMPERATURE (°C)

Fig. 5 Normalized On-Resistance vs. Ambient Temperature

-50-250255075100125150

TA, AMBIENT TEMPERATURE (°C)

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

3 of 5

December 2011

© Diodes Incorporated

20

10,000

16IS, SOURCE CURRENT (A)

12

CT, TOTAL CAPACITANCE (pF)

8

40VSD, SOURCE-DRAIN VOLTAGE (V)Fig. 7 Diode Forward Voltage vs. Current

VDS, DRAIN-SOURCE VOLTAGE (V)Fig. 8 Typical Total Capacitance

r(t), TRANSIENT THERMAL RESISTANCE

0.00001

0.00010.001

0.010.11t1

, PULSE DURATION TIME (s)Fig. 9 Transient Thermal Response

101001,000

Package Outline Dimensions

SOT26

DimA B C D 0.95 H J 0.013K L M α

All Dimensions in mm

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

4 of 5

December 2011

© Diodes Incorporated

Suggested Pad Layout

EE

Z

GC

DimensionsValue (in mm)

Z 3.20 G 1.60 X 0.55 Y 0.80

C

E

Y

X

2.40

0.95

IMPORTANT NOTICE

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