HCNR200 HCNR201数据手册(2)

模拟光耦

Absolute Maximum Ratings

Storage Temperature ..............................................................................................-55°C to +125°COperating Temperature (TA) .................................................................................-55°C to +100°CJunction Temperature (TJ) .........................................................................................................125°CRefl ow Temperature Profi le ..............................................See Package Outline Drawings SectionLead Solder Temperature ............................................................................................260°C for 10s (up to seating plane)

Average Input Current - IF ........................................................................................................25 mAPeak Input Current - IF ...............................................................................................................40 mA (50 ns maximum pulse width)Reverse Input Voltage - VR ............................................................................................................2.5 V (IR = 100 μA, Pin 1-2)Input Power Dissipation ....................................................................................60 mW @ TA = 85°C (Derate at 2.2 mW/°C for operating temperatures above 85°C)

Reverse Output Photodiode Voltage ........................................................................................30 V (Pin 6-5)

Reverse Input Photodiode Voltage ............................................................................................30 V (Pin 3-4)

Recommended Operating Conditions

Storage Temperature .................................................................................................-40°C to +85°COperating Temperature ............................................................................................-40°C to +85°CAverage Input Current - IF ..................................................................................................1 - 20 mAPeak Input Current - IF ...............................................................................................................35 mA (50% duty cycle, 1 ms pulse width)

Reverse Output Photodiode Voltage ..................................................................................0 - 15 V (Pin 6-5)

Reverse Input Photodiode Voltage ......................................................................................0 - 15 V (Pin 3-4)

模拟光耦

Electrical Specifi cations

T

= 25°C unless otherwise specifi ed.

模拟光耦

AC Electrical Specifi cations

TA = 25°C unless otherwise specifi ed.

Parameter

LED Bandwidth

Application Circuit Bandwidth: High Speed High Precision Application Circuit: IMRR High Speed

Symbol

f -3dB

Device

Min.

Typ.

9 10 95

Max.

Units

MHz

Test Conditions

IF = 10 mA

Fig. Note

MHz kHz dB

freq = 60 Hz

16

666, 7

Package Characteristics

T

= 25°C unless otherwise specifi ed.*The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous voltage rating. For the continuous voltage rating refer to the VDE 0884 Insulation Characteristics Table (if applicable), your equipment level safety specifi cation, or Application Note 1074, “Optocoupler Input-Output Endurance Voltage.”

Notes:

1. K3 is calculated from the slope of the best fi t line of IPD2 vs. IPD1 with eleven equally distributed data points from 5 nA to 50 μA. This is approxi-mately equal to IPD2/IPD1 at IF = 10 mA.

2. BEST FIT DC NONLINEARITY (NLBF) is the maximum deviation expressed as a percentage of the full scale output of a “best fi t” straight line from a graph of IPD2 vs. IPD1 with eleven equally distrib uted data points from 5 nA to 50 μA. IPD2 error to best fi t line is the deviation below and above the best fi t line, expressed as a percentage of the full scale output.

3. ENDS FIT DC NONLINEARITY (NLEF) is the maximum deviation expressed as a percentage of full scale output of a straight line from the 5 nA to the 50 μA data point on the graph of IPD2 vs. IPD1.

4. Device considered a two-terminal device: Pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together.

5. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage of ≥6000 V rms for ≥1 second (leakage detection current limit, II-O of 5 μA max.). This test is performed before the 100% production test for partial discharge (method b) shown in the IEC/EN/DIN EN 60747-5-2 Insulation Characteris-tics Table (for Option #050 only).6. Specifi c performance will depend on circuit topology and components.7. IMRR is defi ned as the ratio of the signal gain (with signal applied to VIN of Figure 16) to the isolation mode gain (with VIN connected to input common and the signal applied between the input and output commons) at 60 Hz, expressed in dB.

模拟光耦

N

IAG REFSNART – 3K DEZILAMRON

IPD1 – INPUT PHOTODIODE CURRENT – µAFigure 2. Normalized K3 vs. input IPD.

%

– YTIRAENIL-NON TIF-TSEB – FBLNTA – TEMPERATURE – °CFigure 5. NLBF vs. temperature.A

n – EGAKAEL EDOIDOTOHP – KLI-55

-255356595125

TA – TEMPERATURE – °CFigure 8. Typical photodiode leakage vs. temperature.

N

IAG REFSNART 3K FO TFIRD – 3K ATLEDTA – TEMPERATURE – °CFigure 3. K3 drift vs. temperature.

S

TP % – LN TIF-TSEB FO TFIRD – FBLN ATLEDTA – TEMPERATURE – °CFigure 6. NLBF drift vs. temperature.

100

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