离子辅助反应蒸发技术室温制备ITO薄膜_喻志农(2)

[5]孙大雄,菊池和夫.ITO透明导电膜高速成膜的研究

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[6]SutapaRR.DipcoatedITOthinfilmsthroughso-lgelpro-cessusingmetalsalts[J].ThinSolidFilms,2001,389:207-212.

3 结 论

采用离子辅助真空反应蒸发技术,蒸发高纯铟锡合金,在室温下适当地调节制备参数可以制备电

阻率为214@10-38#cm,平均透射比为82%的透明导电薄膜,薄膜具有(222)的择优取向,晶粒的尺寸约为21nm.离子辅助反应蒸发技术室温制备的ITO薄膜具有良好的结晶性和光电特性.

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