PS2861B规格书,Datasheet 资料
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DESCRIPTION
The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.
The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP (Small Outline Package) for high density applications.
Due to the high isolation voltage between the input and output, the PS2861B-1 is suitable for interface and signal transfer circuits that require surface or high-density mounting.
FEATURES
? Operating ambient temperature: 110°C ? Isolation distance (0.4 mm MIN.)
? High isolation voltage (BV = 3 750 Vr.m.s.) ? Shrink SOP (Small Outline Package) type
? High-speed switching (t r = 4 μs TYP., t f
= 5 μs TYP.) ? Embossed tape product: PS2861B-1-F3: 3 500 pcs/reel ? Pb-Free product ? Safety standards
? UL approved: No. E72422
? CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) ? BSI approved: No. 8979/8980 ? SEMKO approved: No. 908508
? DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024453 (Option) APPLICATIONS
? Power supply
? Programmable logic controllers
PHOTOCOUPLER
PS2861B-1
4-PIN SSOP PHOTOCOUPLER
OPERATING AMBIENT TEMPERATURE 110°C
?NEPOC Series ?
Document No. PN10742EJ02V0DS (2nd edition) Date Published March 2010 NS
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PACKAGE DIMENSIONS (UNIT : mm)
PHOTOCOUPLER CONSTRUCTION
Parameter Unit (MIN.)
Air Distance 5.0 mm Creepage Distance 5.0 mm Isolation Distance
0.4 mm
MARKING EXAMPLE
Data Sheet PN10742EJ02V0DS
2
PS2861B-1
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ORDERING INFORMATION
Part Number
Order Number
Solder Plating Specification
etc.
Packing Style
Safety Standard
Approval
Application Part Number
*1
PS2861B-1 PS2861B-1Y-A Pb-Free and Magazine case 100 pcs Standard products PS2861B-1 PS2861B-1-F3 PS2861B-1Y-F3-A Halogen Free Embossed Tape 3 500 pcs/reel
(UL, CSA, BSI,
SEMKO approved) PS2861B-1-V PS2861B-1Y-V-A Magazine case 100 pcs DIN EN60747-5-2 PS2861B-1-V-F3 PS2861B-1Y-V-F3-A Embossed Tape 3 500 pcs/reel (VDE0884 Part2)
approved (Option)
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T A = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode
Forward Current (DC)
I F 50 mA Reverse Voltage V R 6 V
Power Dissipation Derating
ΔP D /°C 0.6 mW/°C
Power Dissipation P D 60 mW Peak Forward Current1*1
I FP 1 2.5 A
Peak Forward Current2*2
I FP 2 1.0 Transistor Collector to Emitter Voltage V CEO 70 V
Emitter to Collector Voltage
V ECO 5 V Collector Current I C 50 mA
Power Dissipation Derating
ΔP C /°C 1.2 mW/°C
Power Dissipation P C 120 mW
Isolation Voltage *3
BV 3 750 Vr.m.s. Operating Ambient Temperature T A –55 to +110 °C Storage Temperature
T stg
–55 to +150
°C
*1 PW = 10 μs, Duty Cycle = 1% *2 PW = 100 μs, Duty Cycle = 1%
*3 AC voltage for 1 minute at T A = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together. Data Sheet PN10742EJ02V0DS
3
PS2861B-1
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ELECTRICAL CHARACTERISTICS (T A = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage
V F
I F = 5 mA 1.1 1.4 V
Reverse Current I R V R = 5 V
5 μA
Terminal Capacitance C t V = 0 V, f = 1 MHz 15 pF Transistor Collector to Emitter Dark
Current
I CEO
I F = 0 mA, V CE = 24 V
100
nA
I F = 5 mA, V CE = 5 V 50 150 300 % Coupled
Current Transfer Ratio
(I C /I F )*1
CTR I F = 1 mA, V CE = 5 V 10 50 Collector Saturation Voltage
V CE (sat)
I F = 10 mA, I C = 2 mA
0.3
V
Isolation Resistance R I-O V I-O = 1 kV DC 1011
Ω Isolation Capacitance C I-O V = 0 V, f = 1 MHz
0.4
pF
Rise Time *2
t r V CC = 5 V, I C = 2 mA, R L = 100 Ω
4 μs Fall Time *2
t f
5
*1 CTR rank
CTR Rank CTR (%) Conditions
100 to 300 I F = 5 mA, V CE = 5 V L
20 and larger
I F = 1 mA, V CE = 5 V 50 to 150 I F = 5 mA, V CE = 5 V M
10 and larger
I F = 1 mA, V CE = 5 V 50 to 300 I F = 5 mA, V CE = 5 V N
10 and larger
I F = 1 mA, V CE = 5 V
*2 Test circuit for switching time
Input
Output
90%
10%
V CC
V OUT
Pulse Input In monitor
μ
Data Sheet PN10742EJ02V0DS
4
PS2861B-1
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TYPICAL CHARACTERISTICS (T A = 25°C, unless otherwise specified)
Ambient Temperature T A (°C)D i o d e P o w e r D i s s i p a t i o
n P D (m W )
DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURE
Ambient Temperature T A (°C)
T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )
TRANSISTOR POWER DISSIPATION vs.AMBIENT TEMPERATURE
Collector to Emitter Voltage V CE (V)
C o l l e c t o r C u r r e n t I C (m A )
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