V436616Y04VATG-10PC中文资料

MOSEL VITELIC

V436616Y04VATG-10PC

3.3 VOLT 16M x 64 HIGH PERFORMANCE100 MHZ SDRAM UNBUFFERED SODIMM

PRELIMINARY

Features

IJEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module (SODIMM)

ISerial Presence Detect with E2PROMINonbuffered

IFully Synchronous, All Signals Registered on Positive Edge of System Clock

ISingle +3.3V (± 0.3V) Power Supply IAll Device Pins are LVTTL CompatibleI8192 Refresh Cycles every 64 msISelf-Refresh Mode

IInternal Pipelined Operation; Column Address can be changed every System Clock

IAuto Precharge and Piecharge all Banks by A10IData Mask Function by DQMIMode Register Set Programming

IDescription

The V436616Y04VATG-10PC memory module isorganized 16,777,216 x 64 bits in a 144 pinSODIMM. The 16M x 64 memory module uses 4Mosel-Vitelic 16M x 16 SDRAM. The x64 modulesare ideal for use in high performance computersystems where increased memory density and fastaccess times are required.

Part Number

V436616Y04VATG-10PC

Speed Grade

-10PC (100 MHz)

Configuration

16M x 64

V436616Y04VATG-10PC Rev. 1.1 October 2000

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Pin Configurations (Front Side/Back Side)

Pin123456789101112131415161718192021222324

FrontVSSVSSDQ0DQ32DQ1DQ33DQ2DQ34DQ3DQ35VDDVDDDQ4DQ36DQ5DQ37DQ6DQ38DQ7DQ39VSSVSSDQMB0DQMB4

Pin252627282930313233343536373839404142434445464748

FrontDQMB1DQMB5VDDVDDA0A3A1A4A2A5VSSVSSDQ8DQ40DQ9DQ41DQ10DQ42DQ11DQ43VDDVDDDQ12DQ44

Pin495051525354555657585960616263646566676869707172

FrontDQ13DQ45DQ14DQ46DQ15DQ47VSSVSSNCNCNCNCCLK0CKE0VDDVDDCKE1NCA12

Pin737475767778798081828384858687888990919293949596

BackNCCLK1VSSVSSNCNCNCNCVDDVDDDQ16DQ48DQ17DQ49DQ18DQ50DQ19DQ51VSSVSSDQ20DQ52DQ21DQ53

Pin979899100101102103104105106107108109110111112113114115116117118119120

V436616Y04VATG-10PC

BackDQ22DQ54DQ23DQ55VDDVDDA6A7A8BA0VSSVSSA9BA1A10A11VDDVDDDQMB2DQMB6DQMB3DQMB7VSSVSS

Pin121122123124125126127128129130131132133134135136137138139140141142143144

BackDQ24DQ56DQ25DQ57DQ26DQ58DQ27DQ59VDDVDDDQ28DQ60DQ29DQ61DQ30DQ62DQ31DQ63VSSVSSSDASCLVDDVDD

Note:

1.Pin Names

A0–A12, BA0, BA1DQ0–DQ63RASCASWECS0, CS1DQMB0–DQMB7CKE0, CKE1CLK0, CLK1SDASCLVDDVSSNC

Address, Bank SelectData Inputs/OutputsRow Address StrobesColumn Address StrobesWrite EnableChip SelectOutput EnableClock EnableClock

Serial Input/OutputSerial ClockPower SupplyGround

No Connect (Open)

V436616Y04VATG-10PC Rev. 1.1 October 2000

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Part Number Information

V436616Y04VATG-10PC

Block Diagram

V436616Y04VATG-10PC Rev. 1.1 October 2000

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Serial Presence Detect Information

A serial presence detect storage device –2EPROM – is assembled onto the module. Informa-tion about the module configuration, speed, etc. is

V436616Y04VATG-10PC

written into the E2PROM device during module pro-duction using a serial presence detect protocol (I2C

synchronous 2-wire bus)

SPD-Table for -10 PC modules:

Hex Value

ByteNumber

01234567891011121314151617181920212223242526272829

Function Described

Number of SPD bytesTotal bytes in Serial PDMemory Type

Number of Row Addresses (without BS bits)Number of Column Addresses (for x16 SDRAM)Number of DIMM BanksModule Data Width

Module Data Width (continued)Module Interface LevelsSDRAM Cycle Time at CL=3

SDRAM Access Time from Clock at CL=3Dimm Config (Error Det/Corr.)Refresh Rate/TypeSDRAM width, Primary

Error Checking SDRAM Data WidthMinimum Clock Delay from Back to BackRandom Column AddressBurst Length SupportedNumber of SDRAM BanksSDRAM DIMM Module AttributesSDRAM Device Attributes: General

Maximum Data Access Time from Clock for CL = 2 Minimum Clock Cycle Time at CL = 1

Maximum Data Access Time from Clock at CL = 1Minimum Row Precharge Time tRP

Minimum Row Active to Row Active Delay tRRDRCD

SPD Entry Value

128256SDRAM1391640LVTTL10.0 ns6.0 nsnone

Self-Refresh, 15.6µs

x16n/a / x8tccd = 1 CLK1, 2, 4, 8, full page

4CL = 2 & 3WL = 0

Non Buffered/Non Reg.

Vcc tol ± 10%10.0 ns6.0 nsNot SupportedNot Supported

20 ns16 ns20 ns

100 MHz-10PC

8008040D0901400001A06000801000018F04060101000EA0600000141014

V436616Y04VATG-10PC Rev. 1.1 October 2000

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SPD-Table for -10 PC modules: (Continued)

V436616Y04VATG-10PC

Hex Value

ByteNumber

30313233343536-61626364-125126127128+

Function Described

Minimum RAS Pulse Width tRASModule Bank Density (Per Bank)SDRAM Input Setup TimeSDRAM Input Hold TimeSDRAM Data Input Setup TimeSDRAM Data Input Hold Time

Superset Information (May be used in Future)SPD Revision

Checksum for Bytes 0 - 62

Manufacturers’s Information (Optional)Max. Frequency Specification100 MHz Support DetailsUnused Storage Location

SPD Entry Value

48 ns128 MByte2.0 ns1 ns2.0 ns1 ns

100 MHz-10PC

30202010201000

Revision 1.2121800

100 MHz640000

Absolute Maximum Ratings

Parameter

Voltage on VDD Supply Relative to VSSVoltage on Input Relative to VSSOperating TemperatureStorage TemperaturePower Dissipation

Max.

-1 to 4.6-1 to 4.60 to +70-55 to 125

4

Units

VV°C°CW

TA = 0°C to 70°C; VSS = 0 V; VDD, VDDQ = 3.3V ± 0.3V

Limit Values

Symbol

VIHVILVOHVOLII(L)IO(L)

DC Characteristics

Parameter

Input High VoltageInput Low Voltage

Output High Voltage (IOUT = –4.0 mA)Output Low Voltage (IOUT = 4.0 mA)Input Leakage Current, any input

(0 V < VIN < 3.6 V, all other inputs = 0V)Output leakage current

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