BTB08-XXXCW中文资料

元器件交易网http://doc.guandang.net

®

BTA08, BTB08 and T8 Series

8A TRIACS

SNUBBERLESS , LOGIC LEVEL & STANDARD

Table 1: Main Features

SymbolIT(RMS)VDRM/VRRMIGT (Q1)

Value8600 and 8005 to 50

UnitAVmA

DESCRIPTION

Available either in through-hole or surface-mountpackages, the BTA08, BTB08 and T8 triac seriesis suitable for general purpose AC switching. Theycan be used as an ON/OFF function in applica-tions such as static relays, heating regulation, in-duction motor starting circuits... or for phasecontrol operation in light dimmers, motor speedcontrollers,...

The snubberless versions (BTA/BTB...W and T8series) are specially recommended for use oninductive loads, thanks to their high commutationperformances.

Logic level versions are designed to interfacedirectly with low power drivers such asmicrocontrollers.

By using an internal ceramic pad, the BTA seriesprovides voltage insulated tab (rated at2500VRMS) complying with UL standards (file ref.:E81734).

Table 2: Order Codes

Part NumberBTA08-xxxxxRGT8xx-xxxGT8xx-xxxH

MarkingSee page table 8 on

page 10

February 2006REV. 61/11

BTA08, BTB08 and T8 Series

Table 3: Absolute Maximum RatingsSymbolIT(RMS)

Parameter

RMS on-state current (full sine wave)

IPAK/D2PAK/T = 110°CDPAK/TO-220ABcTO-220AB Ins.

Tc = 100°Ct = 20 mst = 16.7 ms

808436

Tj = 125°CTj = 125°CTj = 125°C

5041- 40 to + 150- 40 to + 125

AA²sA/µsAW°C

Value8

UnitA

ITSMI²tdI/dtIGMPG(AV)TstgTj

Non repetitive surge peak on-state F = 50 Hzcurrent (full cycle, Tj initial = 25°C)F = 60 HzI²t Value for fusing

Critical rate of rise of on-state cur-rent IG = 2 x IGT , tr ≤ 100 nsPeak gate current

tp = 10 msF = 120 Hztp = 20 µs

Average gate power dissipationStorage junction temperature range

Operating junction temperature range

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

■

SNUBBERLESS and Logic Level (3 quadrants)SymbolIGT (1)VGTVGDIH (2)ILdV/dt (2)

Test Conditions

Quad-rant

I-II-IIIMAX.I - II - IIIMAX.

MIN.MAX.

I - IIIII

MAX.MIN.

152530405.4

MIN.

2.8-355060400--4.5

101015203.51.5-T8T810T83510

35

TW51.30.2

152530405.42.98-355060400--4.5

507080

BTA08 / BTB08SW10

CW35

BW50

UnitmAVVmAmA

VD = 12 V RL = 30

VD = VDRM RL = 3.3 k

I - II - III

Tj = 125°CIT = 100 mAIG = 1.2 IGT

VD = 67 %VDRM gate openTj = 125°C

(dV/dt)c = 0.1 V/µs Tj = 125°C

1000V/µs--7

A/ms

(dI/dt)c (2)(dV/dt)c = 10 V/µs Tj = 125°C

Without snubber Tj = 125°C

2/11

BTA08, BTB08 and T8 Series

■

Standard (4 quadrants)SymbolIGT (1)VGTVGDIH (2)ILdV/dt (2)

VD = VDRM RL = 3.3 k Tj = 125°CIT = 500 mAIG = 1.2 IGT

VD = 67 %VDRM gate open Tj = 125°C

I - III - IV

II

Test Conditions

QuadrantI - II - IIIIVALLALL

MAX.MAX.MIN.MAX.MAX.MIN.MIN.

2540802005

BTA08 / BTB08C2550

1.30.2

505010040010B50100

UnitmAVVmAmAV/µsV/µs

VD = 12 V RL = 30

(dV/dt)c (2)(dI/dt)c = 5.3 A/ms Tj = 125°CTable 5: Static CharacteristicsSymbolVT (2)Vto (2)Rd (2)IDRMIRRM

Test Conditions

ITM = 11 A tp = 380 µsThreshold voltageDynamic resistanceVDRM = VRRM

Tj = 25°CTj = 125°CTj = 125°CTj = 25°CTj = 125°C

Value

MAX.MAX.MAX.MAX.

1.550.855051

UnitVVm µAmA

Note 1: minimum IGT is guaranted at 5% of IGT max.Note 2: for both polarities of A2 referenced to A1.

Table 6: Thermal resistanceSymbolRth(j-c)

Junction to case (AC)

S = 1 cm²

Rth(j-a)

Junction to ambient

S = 0.5 cm²

Parameter

IPAK / D2PAK / DPAK / TO-220ABTO-220AB InsulatedD2PAKDPAK

TO-220AB / TO-220AB InsulatedIPAK

S = Copper surface under tab.

Value1.62.5457060100

Unit°C/W

°C/W

3/11

BTA08, BTB08 and T8 Series

Figure 1: Maximum power dissipation versusRMS on-state current (full cycle)

Figure 2: RMS on-state current versus casetemperature (full cycle)

Figure 3: RMS on-state current versus ambienttemperature (printed circuit board FR4, copperthickness: 35µm) (full cycle)

Figure 4: Relative variation of thermalimpedance versus pulse duration

Figure 5: On-state characteristics (maximumvalues)

Figure 6: Surge peak on-state current versusnumber of cycles

4/11

BTA08, BTB08 and T8 Series

Figure 7: Non-repetitive surge peak on-statecurrent for a sinusoidal pulse with width tp < 10 msand corresponding value of I2t

Figure 8: Relative variation of gate triggercurrent, holding current and latching currentversus junction temperature (typical values)

Figure 9: Relative variation of critical rate ofdecrease of main current versus (dV/dt)c(typical values) (Snubberless & Logic leveltypes)

Figure 10: Relative variation of critical rate ofdecrease of main current versus (dV/dt)c(typical values) (Standard types)

Figure 11: Relative variation of critical rate ofdecrease of main current versus junctiontemperature

Figure 12: DPAK and D2PAK Thermal resistancejunction to ambient versus copper surface undertab (printed circuit board FR4, copper thickness:35µm)

5/11

BTA08, BTB08 and T8 Series

Figure 13: Ordering Information Scheme (BTA08 and BTB08 series)

Figure 14: Ordering Information Scheme (T8 series)

Table 7: Product Selector

Part Number

BTA/BTB08-xxxBBTA/BTB08-xxxBWBTA/BTB08-xxxCB …… 此处隐藏：5673字，全部文档内容请下载后查看。喜欢就下载吧 ……